- 无铅状况/ROHS: 无铅
- 描绘：The W39V040FC is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K?x 8 bits. For flexible erase capability, the 4Mbits of data are divided into 16 x 8 Kbytes pages and 6 x 64 Kbytes sectors or 8 x 64 Kbytes sectors. The device can be programm
- 封装：PLCC 32/STSOP 32
|Package||PLCC 32/STSOP 32|
|Organization||512K x 8|
|Temp||0 to +70|
The W39V040FC is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K?x 8 bits. For flexible erase capability, the 4Mbits of data are divided into 16 x 8 Kbytes pages and 6 x 64 Kbytes sectors or 8 x 64 Kbytes sectors. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is required for accelerated program. The unique cell architecture of the W39V040FC results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode, Firmware Hub (FWH) bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification. The device can also be programmed and erased using standard EPROM programmers.
Single 3.3-volt operations
Fast Read access time:Tkq 11ns
Endurance: 50K cycles (typ)
6 Even sectors with 64K bytes and 16 Even pages with 8K bytes or 8 Even sectors with 64 Kbyte
Hardware protection: 64K byte Top Boot Block with lockout protection/ #TBL & #WP supports the whole chip except Boot Block hardware protection?
Automatic program and erase timing with internal VPP operation
twenty-year data retentions
TTL compatible I/O
JEDEC standard byte-wide pinouts